Assignors: FAIRCHILD SEMICONDUCTOR CORPORATION Status Abandoned legal-status Critical Current Links Assignors: LEE, JAE GIL, OH, KWANG HOON, YEDINAK, JOSEPH ANDREW, YUN, CHONGMAN Assigned to SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC reassignment SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.) Filing date Publication date Priority claimed from US76526106P external-priority Application filed by Fairchild Semiconductor Corp filed Critical Fairchild Semiconductor Corp Priority to US11/408,812 priority Critical patent/US20070181927A1/en Priority to AT0954006A priority patent/AT505499A2/de Priority to KR1020087019992A priority patent/KR20080098371A/ko Priority to PCT/US2006/062298 priority patent/WO2007120345A2/en Priority to JP2008553238A priority patent/JP2009525610A/ja Priority to CN2006800522452A priority patent/CN101336480B/zh Priority to DE112006003714T priority patent/DE112006003714T5/de Priority to TW095149492A priority patent/TWI433316B/zh Publication of US20070181927A1 publication Critical patent/US20070181927A1/en Assigned to FAIRCHILD SEMICONDUCTOR CORPORATION reassignment FAIRCHILD SEMICONDUCTOR CORPORATION ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Original Assignee Fairchild Semiconductor Corp Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.) Inventor Joseph Yedinak Kwang Oh Chongman Yun Jae Lee Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.) Abandoned Application number US11/408,812 Other languages English ( en)
BIPOLAR TRANSISTOR CHARGING PDF
Google Patents Charge balance insulated gate bipolar transistorĭownload PDF Info Publication number US20070181927A1 US20070181927A1 US11/408,812 US40881206A US2007181927A1 US 20070181927 A1 US20070181927 A1 US 20070181927A1 US 40881206 A US40881206 A US 40881206A US 2007181927 A1 US2007181927 A1 US 2007181927A1 Authority US United States Prior art keywords conductivity type pillars igbt region doping concentration Prior art date Legal status (The legal status is an assumption and is not a legal conclusion. Google Patents US20070181927A1 - Charge balance insulated gate bipolar transistor US20070181927A1 - Charge balance insulated gate bipolar transistor
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